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Nanya Technology M2F4G64CB8HG5N-CG 4GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB vs Micron Technology 16ATF4G64HZ-2G6B2 32GB

总分
star star star star star
Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

总分
star star star star star
Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HG5N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HG5N-CG 4GB
报告一个错误
Micron Technology 16ATF4G64HZ-2G6B2 32GB 需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B2 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 41
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 35
  • 读取速度，GB/s
    13.3 left arrow 15.4
  • 写入速度，GB/s
    8.2 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1982 left arrow 2926

Nanya Technology M2F4G64CB8HG5N-CG 4GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
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内存RAM
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Samsung M378B5173BH0-CH9 4GB
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内存RAM
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内存RAM
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Mushkin 99[2/7/4]209F 8GB
内存RAM
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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Kingston KF3000C16D4/32GX 32GB
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