Nanya Technology M2F4G64CB8HG5N-CG 4GB vs Samsung M386A8K40BM1-CRC 64GB

总分

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

总分

Samsung M386A8K40BM1-CRC 64GB

Samsung M386A8K40BM1-CRC 64GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HG5N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HG5N-CG 4GB

报告一个错误

更快的读取速度，GB/s

13.3 10.4

测试中的平均数值
更快的写入速度，GB/s

8.2 7.5

测试中的平均数值

Samsung M386A8K40BM1-CRC 64GB

需要考虑的原因
Samsung M386A8K40BM1-CRC 64GB

报告一个错误

低于PassMark测试中的延时，ns

34 41

左右 -21% 更低的延时
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Samsung M386A8K40BM1-CRC 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 34
读取速度，GB/s

13.3 10.4
写入速度，GB/s

8.2 7.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1982 2297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DOVF1B163G2G 2GB

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Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

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Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 9905712-010.A00G 16GB

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Kingston 9965596-002.B00G 4GB

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SK Hynix HMT325S6CFR8C-PB 2GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

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