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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

总分
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分
star star star star star
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

差异 规格 评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB 需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB 需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.1 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 26
  • 读取速度，GB/s
    12.3 left arrow 19.1
  • 写入速度，GB/s
    7.1 left arrow 15.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1952 left arrow 3773

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较

SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
Apacer Technology 78.01G86.9H50C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Transcend Information TS2GLH64V1B 16GB
Transcend Information TS2GLH64V1B 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3600C16-16GTRG 16GB
G Skill Intl F4-3600C16-16GTRG 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Corsair CMK16GX4M2E4333C19 8GB
Corsair CMK16GX4M2E4333C19 8GB
内存RAM
Elpida EBE10UE8AFSA-8G-F 1GB
Elpida EBE10UE8AFSA-8G-F 1GB
Samsung M378A1K43BB2-CRC 8GB
Samsung M378A1K43BB2-CRC 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
内存RAM
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
Corsair CMWX8GF2666C16W4 8GB
Corsair CMWX8GF2666C16W4 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMD16GX4M4B2133C10 4GB
Corsair CMD16GX4M4B2133C10 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
内存RAM