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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingston ACR26D4U9S8HJ-8 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Kingston ACR26D4U9S8HJ-8 8GB

总分
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分
star star star star star
Kingston ACR26D4U9S8HJ-8 8GB

Kingston ACR26D4U9S8HJ-8 8GB

差异 规格 评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB 需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 30
    左右 13% 更低的延时
Kingston ACR26D4U9S8HJ-8 8GB 需要考虑的原因
Kingston ACR26D4U9S8HJ-8 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingston ACR26D4U9S8HJ-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 30
  • 读取速度，GB/s
    12.3 left arrow 15.9
  • 写入速度，GB/s
    7.1 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1952 left arrow 3021

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较

SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Kingston ACR26D4U9S8HJ-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
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内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingston ACR26D4U9S8HJ-8 8GB
Kingston ACR26D4U9S8HJ-8 8GB
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内存RAM
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Kingston 9905403-090.A01LF 4GB
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Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology BLS8G4D240FSE.16FBD2 8GB
Crucial Technology BLS8G4D240FSE.16FBD2 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
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A-DATA Technology DQVE1908 512MB
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Samsung M378A1G44BB0-CWE 8GB
内存RAM
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Kingston 99U5469-045.A00LF 4GB
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SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
内存RAM