Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Micron Technology 16ATF2G64AZ-2G6B1 16GB

总分

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

差异规格评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

报告一个错误

Micron Technology 16ATF2G64AZ-2G6B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

18.2 12.3

测试中的平均数值
更快的写入速度，GB/s

13.5 7.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

12.3 18.2
写入速度，GB/s

7.1 13.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1952 3201

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M2B3200C16 16GB

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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

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Kingston 99U5474-010.A00LF 2GB

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Crucial Technology CT16G4DFD824A.M16FJ 16GB

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Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

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Kingston 9905471-002.A00LF 2GB

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Avant Technology J644GU44J2320NF 32GB

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SpecTek Incorporated ?????????????????? 2GB

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Samsung M471A2K43CB1-CRCR 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-2400C11-8GXM 8GB

G Skill Intl F3-2400C11-8GXM 8GB