Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Micron Technology 8ATF1G64HZ-2G2G1 8GB

总分

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

差异规格评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

报告一个错误

更快的写入速度，GB/s

7.1 6.9

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G2G1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G2G1 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的读取速度，GB/s

14.3 12.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

12.3 14.3
写入速度，GB/s

7.1 6.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1952 2191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-037.A00LF 4GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M471A1A43DB0-CPB 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Kingston 9905700-046.A00G 16GB