Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Samsung M393A2K43BB1-CRC 16GB

总分

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分

Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

差异规格评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 51% 更低的延时
更快的读取速度，GB/s

12.3 10.4

测试中的平均数值

Samsung M393A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M393A2K43BB1-CRC 16GB

报告一个错误

更快的写入速度，GB/s

7.8 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Samsung M393A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 53
读取速度，GB/s

12.3 10.4
写入速度，GB/s

7.1 7.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1952 2333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMW32GX4M2D3000C16 16GB

Corsair CMW32GX4M2D3000C16 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4DFD8213.M16FB 8GB

Crucial Technology CT8G4DFD8213.M16FB 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMD16GX4M4B3333C16 4GB

Corsair CMD16GX4M4B3333C16 4GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73CB0-YK0 8GB

Samsung M471B1G73CB0-YK0 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB