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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M393A2K43BB1-CRC 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Samsung M393A2K43BB1-CRC 16GB

Overall score
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Overall score
star star star star star
Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

Differences Specifications Comments

Differences

Nanya Technology M2F4GH64CB8HB6N-CG 4GB Reasons to consider
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 53
    Around 51% lower latency
  • Faster reading speed, GB/s
    12.3 left arrow 10.4
    Average value in the tests
Samsung M393A2K43BB1-CRC 16GB Reasons to consider
Samsung M393A2K43BB1-CRC 16GB
Report a bug
  • Faster write speed, GB/s
    7.8 left arrow 7.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M393A2K43BB1-CRC 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 53
  • Read speed, GB/s
    12.3 left arrow 10.4
  • Write speed, GB/s
    7.1 left arrow 7.8
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1952 left arrow 2333

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM comparisons

SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Samsung M393A2K43BB1-CRC 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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