Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Asgard VMA44UG-MEC1U2AW1 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Asgard VMA44UG-MEC1U2AW1 8GB

Asgard VMA44UG-MEC1U2AW1 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 61

左右 39% 更低的延时

Asgard VMA44UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA44UG-MEC1U2AW1 8GB

报告一个错误

更快的读取速度，GB/s

17.2 13.9

测试中的平均数值
更快的写入速度，GB/s

8.9 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Asgard VMA44UG-MEC1U2AW1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 61
读取速度，GB/s

13.9 17.2
写入速度，GB/s

8.6 8.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2395 2089

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFD8266.C16FD1 16GB

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Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-3300C16-16GTZ 16GB

G Skill Intl F4-3300C16-16GTZ 16GB

Elpida EBJ10UE8BDS0-AE-F 1GB

Elpida EBJ10UE8BDS0-AE-F 1GB

Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB