Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Corsair CMW128GX4M8X3600C18 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Corsair CMW128GX4M8X3600C18 16GB

Corsair CMW128GX4M8X3600C18 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 82

左右 55% 更低的延时
更快的读取速度，GB/s

13.9 12.3

测试中的平均数值

Corsair CMW128GX4M8X3600C18 16GB

需要考虑的原因
Corsair CMW128GX4M8X3600C18 16GB

报告一个错误

更快的写入速度，GB/s

11.3 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMW128GX4M8X3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 82
读取速度，GB/s

13.9 12.3
写入速度，GB/s

8.6 11.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2395 1930

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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A-DATA Technology DDR4 2800 8GB

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Crucial Technology CT8G4DFS824A.C8FBR1 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CM4X8GD3200C16K4 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

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Mushkin 99[2/7/4]189F 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Apacer Technology 78.C2GF2.AU00B 8GB

Apacer Technology 78.C2GF2.AU00B 8GB