RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology 18ASF1G72PDZ-2G6E1 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
10.6
测试中的平均数值
更快的写入速度,GB/s
11.8
8.8
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
报告一个错误
低于PassMark测试中的延时,ns
44
51
左右 -16% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
44
读取速度,GB/s
15.6
10.6
写入速度,GB/s
11.8
8.8
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
2374
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Chun Well Technology Holding Limited CL19-19-19 D4-2666
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK128GX4M8B3000C16 16GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
Kingston 9905471-002.A00LF 2GB
SK Hynix HMA82GR7AFR4N-TF 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX2400C15S4/8G 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Kingston 9905402-665.A00LF 4GB
Corsair CMWX8GD3200C16W4 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-2400C17-4GNT 4GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 9905665-009.A00G 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Qimonda 72T128420EFA3SB2 1GB
G Skill Intl F4-3800C14-16GTZN 16GB
报告一个错误
×
Bug description
Source link