Samsung M471B5173DB0-YK0 4GB vs Crucial Technology BLS16G4S26BFSD.16FBD 16GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4S26BFSD.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 45

左右 -32% 更低的延时
更快的读取速度，GB/s

14.5 12

测试中的平均数值
更快的写入速度，GB/s

9.6 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 34
读取速度，GB/s

12.0 14.5
写入速度，GB/s

7.8 9.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 2576

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingston 9905469-143.A00LF 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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G Skill Intl F4-2933C16-8GTZRX 8GB

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Corsair CMX8GX3M2A2000C9 4GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

Crucial Technology CT8G4DFS824A.M8FE 8GB