Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology CT16G4SFD824A.M16FD1 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Crucial Technology CT16G4SFD824A.M16FD1 16GB

Crucial Technology CT16G4SFD824A.M16FD1 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Crucial Technology CT16G4SFD824A.M16FD1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 -48% 更低的延时
更快的读取速度，GB/s

15.6 13.9

测试中的平均数值
更快的写入速度，GB/s

13.4 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT16G4SFD824A.M16FD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 25
读取速度，GB/s

13.9 15.6
写入速度，GB/s

8.6 13.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2395 2702

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-2933 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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A-DATA Technology DQVE1908 512MB

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

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Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Corsair CMU64GX4M4D3000C16 16GB

Corsair CMU64GX4M4D3000C16 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB