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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Essencore Limited IM44GU48N24-FFFHA0 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Essencore Limited IM44GU48N24-FFFHA0 4GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Essencore Limited IM44GU48N24-FFFHA0 4GB

Essencore Limited IM44GU48N24-FFFHA0 4GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Essencore Limited IM44GU48N24-FFFHA0 4GB 需要考虑的原因
Essencore Limited IM44GU48N24-FFFHA0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 37
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 22
  • 读取速度，GB/s
    13.9 left arrow 18.1
  • 写入速度，GB/s
    8.6 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3091

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Essencore Limited IM44GU48N24-FFFHA0 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Mushkin 99[2/7/4]204[F/T] 4GB
Mushkin 99[2/7/4]204[F/T] 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Essencore Limited KD48GS481-26N1600 8GB
Essencore Limited KD48GS481-26N1600 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Essencore Limited KD48GU880-36A180U 8GB
Essencore Limited KD48GU880-36A180U 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Corsair CMT32GX4M4C3600C18 8GB
Corsair CMT32GX4M4C3600C18 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905622-055.A00G 4GB
Kingston 9905622-055.A00G 4GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston 9905702-012.A00G 8GB
Kingston 9905702-012.A00G 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Corsair CMT32GX4M4C3466C16 8GB
Corsair CMT32GX4M4C3466C16 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMSX16GX4M1A2666C18 16GB
Corsair CMSX16GX4M1A2666C18 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston 9965667-001.A00G 16GB
Kingston 9965667-001.A00G 16GB
内存RAM