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Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C19-16GTRG 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs G Skill Intl F4-3600C19-16GTRG 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
G Skill Intl F4-3600C19-16GTRG 16GB 需要考虑的原因
G Skill Intl F4-3600C19-16GTRG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 37
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C19-16GTRG 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 25
  • 读取速度，GB/s
    13.9 left arrow 19.4
  • 写入速度，GB/s
    8.6 left arrow 16.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3933

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

G Skill Intl F4-3600C19-16GTRG 16GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix HMA82GU6AFR8N-UH 16GB
SK Hynix HMA82GU6AFR8N-UH 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMWX8GD3600C18W2D 8GB
Corsair CMWX8GD3600C18W2D 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905599-025.A00G 8GB
Kingston 9905599-025.A00G 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Kingston X75V1H-MIE 32GB
Kingston X75V1H-MIE 32GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Kingston CBD24D4S7D8MB-16 16GB
Kingston CBD24D4S7D8MB-16 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2133C15-16GVR 16GB
G Skill Intl F4-2133C15-16GVR 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-4000C17-16GTRSB 16GB
G Skill Intl F4-4000C17-16GTRSB 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM