Nanya Technology M2F8G64CB8HC9N-DI 8GB vs G Skill Intl F4-4800C19-8GTZRC 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

G Skill Intl F4-4800C19-8GTZRC 8GB

需要考虑的原因
G Skill Intl F4-4800C19-8GTZRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 -37% 更低的延时
更快的读取速度，GB/s

18 13.9

测试中的平均数值
更快的写入速度，GB/s

15.0 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 27
读取速度，GB/s

13.9 18.0
写入速度，GB/s

8.6 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2395 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Samsung M471B5173QH0-YK0 4GB

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Avant Technology J644GU44J1293NF 32GB

Avant Technology J644GU44J1293NF 32GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Corsair CMW8GX4M1D3000C16 8GB

Corsair CMW8GX4M1D3000C16 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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G Skill Intl F4-4266C17-16GTRGB 16GB

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Samsung M471B5173QH0-YK0 4GB

Corsair CMK16GX4M2C3333C16 8GB

Corsair CMK16GX4M2C3333C16 8GB