Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

更快的读取速度，GB/s

13.9 10.2

测试中的平均数值
更快的写入速度，GB/s

8.6 7.4

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 -6% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 35
读取速度，GB/s

13.9 10.2
写入速度，GB/s

8.6 7.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2395 2124

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Super Talent STT-WB160CL0901 2GB

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Kingston 9905403-444.A00LF 4GB

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Corsair CMW16GX4M2C3000C15 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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