Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Kingston 9905701-022.A00G 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Kingston 9905701-022.A00G 16GB

Kingston 9905701-022.A00G 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Kingston 9905701-022.A00G 16GB

需要考虑的原因
Kingston 9905701-022.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 37

左右 -23% 更低的延时
更快的读取速度，GB/s

15.9 13.9

测试中的平均数值
更快的写入速度，GB/s

9.4 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905701-022.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 30
读取速度，GB/s

13.9 15.9
写入速度，GB/s

8.6 9.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 2505

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Eudar Technology Inc. 8GXMP2666CL16 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Samsung M391B5673FH0-CH9 2GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Corsair CMW64GX4M8Z2933C16 8GB

Corsair CMW64GX4M8Z2933C16 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Samsung M393A2K43CB1-CRC 16GB

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Kingston KHX3200C18D4/8G 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Apacer Technology 78.C1GMM.AUC0B 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB