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Nanya Technology M2F8G64CB8HC9N-DI 8GB
OCMEMORY OCM2933CL16-16GBH 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs OCMEMORY OCM2933CL16-16GBH 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 59
    左右 37% 更低的延时
OCMEMORY OCM2933CL16-16GBH 16GB 需要考虑的原因
OCMEMORY OCM2933CL16-16GBH 16GB
报告一个错误
  • 更快的读取速度，GB/s
    20.1 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 12800
    左右 1.83 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
OCMEMORY OCM2933CL16-16GBH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 59
  • 读取速度，GB/s
    13.9 left arrow 20.1
  • 写入速度，GB/s
    8.6 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 23400
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 2382

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

OCMEMORY OCM2933CL16-16GBH 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
OCMEMORY OCM2933CL16-16GBH 16GB
OCMEMORY OCM2933CL16-16GBH 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KV0M5R-MIE 8GB
Kingston KV0M5R-MIE 8GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
SK Hynix HMA82GS6DJR8N-XN 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Jinyu 16GB
Jinyu 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M1C3000C16 16GB
Corsair CMK16GX4M1C3000C16 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMSX8GX4M1A2666C18 8GB
Corsair CMSX8GX4M1A2666C18 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMD32GX4M2A2800C16 16GB
Corsair CMD32GX4M2A2800C16 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMK16GX4M2B2800C14 8GB
Corsair CMK16GX4M2B2800C14 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C19-16GTZSW 16GB
G Skill Intl F4-4000C19-16GTZSW 16GB
内存RAM