ASint Technology SSA302G08-EGN1C 4GB vs Crucial Technology CT16G4SFD824A.M16FE 16GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Crucial Technology CT16G4SFD824A.M16FE 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时

Crucial Technology CT16G4SFD824A.M16FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FE 16GB

报告一个错误

更快的读取速度，GB/s

14.7 12.6

测试中的平均数值
更快的写入速度，GB/s

11.6 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

12.6 14.7
写入速度，GB/s

9.5 11.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2174 2688

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMA81GU7AFR8N-UH 8GB

SK Hynix HMA81GU7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology AX5U5200C3816G-B 16GB

A-DATA Technology AX5U5200C3816G-B 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Corsair CMK64GX4M2C3200C16 32GB

Corsair CMK64GX4M2C3200C16 32GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Patriot Memory (PDP Systems) PSD48G266682 8GB

Patriot Memory (PDP Systems) PSD48G266682 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-4000C18-32GVK 32GB

G Skill Intl F4-4000C18-32GVK 32GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

G Skill Intl F4-3200C14-8GTZN 8GB

G Skill Intl F4-3200C14-8GTZN 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB