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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A1K43EB2-CVF 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Samsung M378A1K43EB2-CVF 8GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Samsung M378A1K43EB2-CVF 8GB 需要考虑的原因
Samsung M378A1K43EB2-CVF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 37
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 12800
    左右 1.83 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A1K43EB2-CVF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 28
  • 读取速度，GB/s
    13.9 left arrow 17.4
  • 写入速度，GB/s
    8.6 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 23400
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3419

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Samsung M378A1K43EB2-CVF 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Apacer Technology 78.CAGR4.40C0B 8GB
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Hexon Technology Pte Ltd HEXON 1GB
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Kingston KVR533D2N4 512MB
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Kingston 9905702-121.A00G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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Crucial Technology CT16G4DFD824A.C16FE 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
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内存RAM
Kllisre 8GB
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内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Corsair CMK32GX4M4D3000C16 8GB
内存RAM
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SK Hynix HYMP112S64CP6-S6 1GB
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2D3600C18 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
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Micron Technology 4ATF51264HZ-2G3E1 4GB
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内存RAM
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
内存RAM