Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology BL16G30C15U4WL.M16FE 16GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Crucial Technology BL16G30C15U4WL.M16FE 16GB

Crucial Technology BL16G30C15U4WL.M16FE 16GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 18.5

测试中的平均数值

Crucial Technology BL16G30C15U4WL.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G30C15U4WL.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 92

左右 -241% 更低的延时
更快的写入速度，GB/s

15.3 1,266.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology BL16G30C15U4WL.M16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 27
读取速度，GB/s

2,105.4 18.5
写入速度，GB/s

1,266.1 15.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

339 3731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

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Samsung M393B1G70BH0-YK0 8GB

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

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Kingston 99U5428-046.A00LF 4GB

Kingston 99U5428-046.A00LF 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB