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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology BLS8G4D26BFSE.16FE 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.3
    测试中的平均数值
Crucial Technology BLS8G4D26BFSE.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 92
    左右 -217% 更低的延时
  • 更快的写入速度，GB/s
    13.9 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 29
  • 读取速度，GB/s
    2,105.4 left arrow 17.3
  • 写入速度，GB/s
    1,266.1 left arrow 13.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3134

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Samsung M3 78T2953EZ3-CF7 1GB
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Kingston KF552C40-16 16GB
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Kingston 99P5474-014.A00LF 4GB
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Corsair CMD32GX4M2B2800C14 16GB
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Kingston 99U5471-030.A00LF 8GB
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Micron Technology 16ATF2G64HZ-2G3B2 16GB
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A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Avant Technology J642GU42J5213N2 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C16-16GTZRC 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905471-002.A00LF 2GB
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G Skill Intl F4-3000C14-16GVRD 16GB
内存RAM
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Nanya Technology M2X4G64CB8HG9N-DG 4GB
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G Skill Intl F4-3200C16-8GTZR 8GB
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