Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology BLS8G4S240FSDK.8FBD 8GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 15.5

测试中的平均数值

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSDK.8FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 92

左右 -197% 更低的延时
更快的写入速度，GB/s

12.2 1,266.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 31
读取速度，GB/s

2,105.4 15.5
写入速度，GB/s

1,266.1 12.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

339 2819

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C17-8GTZRB 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

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Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.M16FC 4GB

Crucial Technology CT51264AC800.M16FC 4GB