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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4SFD8213.M16FB 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology CT8G4SFD8213.M16FB 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.5
    测试中的平均数值
Crucial Technology CT8G4SFD8213.M16FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFD8213.M16FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 92
    左右 -241% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 27
  • 读取速度，GB/s
    2,105.4 left arrow 15.5
  • 写入速度，GB/s
    1,266.1 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 2628

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Crucial Technology CT8G4SFD8213.M16FB 8GB RAM的比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Golden Empire CL16-16-16 D4-3000 4GB
Golden Empire CL16-16-16 D4-3000 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Apacer Technology 78.C2GFL.C720B 8GB
Apacer Technology 78.C2GFL.C720B 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK64GX4M2A2666C16 32GB
Corsair CMK64GX4M2A2666C16 32GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CM4X8GD3000C16K4D 8GB
Corsair CM4X8GD3000C16K4D 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston KCRXJ6-MIE 16GB
Kingston KCRXJ6-MIE 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM