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Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4400C19-32GVK 32GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-4400C19-32GVK 32GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
G Skill Intl F4-4400C19-32GVK 32GB

G Skill Intl F4-4400C19-32GVK 32GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
G Skill Intl F4-4400C19-32GVK 32GB 需要考虑的原因
G Skill Intl F4-4400C19-32GVK 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 92
    左右 -179% 更低的延时
  • 更快的读取速度，GB/s
    21.1 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.8 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4400C19-32GVK 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 33
  • 读取速度，GB/s
    2,105.4 left arrow 21.1
  • 写入速度，GB/s
    1,266.1 left arrow 18.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, , CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3959

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

G Skill Intl F4-4400C19-32GVK 32GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Essencore Limited IM48GU88N24-FFFHA0 8GB
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Kingston KVR16N11/8-SP 8GB
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Kingston 9905702-136.A00G 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C14-16GTZR 16GB
G Skill Intl F4-3600C14-16GTZR 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3200C16-16GSXFB 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-8GSXFB 8GB
G Skill Intl F4-3200C16-8GSXFB 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Corsair CMWX8GD3200C16W2E 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston MSI26D4S9S8HJ-8 8GB
Kingston MSI26D4S9S8HJ-8 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Corsair CMD16GX4M4B3200C15 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Corsair CM4X8GF2133C13K4 8GB
Corsair CM4X8GF2133C13K4 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
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Kingston KHX2666C13D4/4GX 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KYXC0V-MIB 16GB
Kingston KYXC0V-MIB 16GB
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