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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905622-055.A00G 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Kingston 9905622-055.A00G 4GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Kingston 9905622-055.A00G 4GB

Kingston 9905622-055.A00G 4GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.5
    测试中的平均数值
Kingston 9905622-055.A00G 4GB 需要考虑的原因
Kingston 9905622-055.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 92
    左右 -283% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905622-055.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 24
  • 读取速度，GB/s
    2,105.4 left arrow 14.5
  • 写入速度，GB/s
    1,266.1 left arrow 9.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 2171

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Kingston 9905622-055.A00G 4GB RAM的比较

Kingston 9905403-061.A00LF 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905622-055.A00G 4GB
Kingston 9905622-055.A00G 4GB
内存RAM
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SK Hynix V-GeN D4H8GL26A8TX5 8GB
内存RAM
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Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
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Samsung M471A1A43CB1-CRC 8GB
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内存RAM
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