Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Kingston 9905701-020.A00G 16GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Kingston 9905701-020.A00G 16GB

Kingston 9905701-020.A00G 16GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值

Kingston 9905701-020.A00G 16GB

需要考虑的原因
Kingston 9905701-020.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 92

左右 -179% 更低的延时
更快的写入速度，GB/s

10.7 1,266.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Kingston 9905701-020.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 33
读取速度，GB/s

2,105.4 14.9
写入速度，GB/s

1,266.1 10.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

339 2922

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX8GX3M2A2000C9 4GB

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Corsair CMK16GX4M4B3200C16 4GB

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SK Hynix HMA851S6DJR6N-VK 4GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Apacer Technology 78.BAGNF.40C0B 4GB

Apacer Technology 78.BAGNF.40C0B 4GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB