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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9965600-018.A00G 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Kingston 9965600-018.A00G 16GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Kingston 9965600-018.A00G 16GB

Kingston 9965600-018.A00G 16GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 10.4
    测试中的平均数值
Kingston 9965600-018.A00G 16GB 需要考虑的原因
Kingston 9965600-018.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 92
    左右 -188% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9965600-018.A00G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 32
  • 读取速度，GB/s
    2,105.4 left arrow 10.4
  • 写入速度，GB/s
    1,266.1 left arrow 8.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 2386

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Kingston 9965600-018.A00G 16GB RAM的比较

Kingston 9905458-017.A01LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9905403-090.A01LF 4GB
Corsair CMK32GX4M2K3600C16 16GB
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内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
Qimonda 64T128020EDL2.5C2 1GB
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内存RAM
Samsung M391B5673FH0-CH9 2GB
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G Skill Intl F4-3200C16-16GFX 16GB
G Skill Intl F4-3200C16-16GFX 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Micron Technology CT8G4DFD8213.16FA11 8GB
内存RAM
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内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
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Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
EVGA 16G-D4-2800-MR 4GB
EVGA 16G-D4-2800-MR 4GB
内存RAM
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Kingston 9905701-017.A00G 16GB
内存RAM
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A-DATA Technology VDQVE1B16 2GB
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Crucial Technology BLS16G4D32AESB.M16FE 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
内存RAM