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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Patriot Memory (PDP Systems) PSD416G26662 16GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
Patriot Memory (PDP Systems) PSD416G26662 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
更快的读取速度,GB/s
2
16.3
测试中的平均数值
需要考虑的原因
Patriot Memory (PDP Systems) PSD416G26662 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
92
左右 -188% 更低的延时
更快的写入速度,GB/s
12.6
1,266.1
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
32
读取速度,GB/s
2,105.4
16.3
写入速度,GB/s
1,266.1
12.6
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
339
3164
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
Patriot Memory (PDP Systems) PSD416G26662 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3600C14-8GTZRA 8GB
Corsair CMD16GX3M2A1866C9 8GB
Kingston KHX3733C19D4/16GX 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CB8GU2400.C8D 8GB
TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology DDR4 3600 8GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905670-012.A00G 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-2800C18-8GRS 8GB
Apacer Technology 78.01G86.9H50C 1GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
报告一个错误
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Bug description
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