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Nanya Technology M2N1G64TUH8D5F-AC 1GB
SK Hynix HMA82GS6CJR8N-VK 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs SK Hynix HMA82GS6CJR8N-VK 16GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15
    测试中的平均数值
SK Hynix HMA82GS6CJR8N-VK 16GB 需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 92
    左右 -156% 更低的延时
  • 更快的写入速度，GB/s
    10.1 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SK Hynix HMA82GS6CJR8N-VK 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 36
  • 读取速度，GB/s
    2,105.4 left arrow 15.0
  • 写入速度，GB/s
    1,266.1 left arrow 10.1
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    339 left arrow 2657

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

SK Hynix HMA82GS6CJR8N-VK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMD64GX4M8A2400C14 8GB
Corsair CMD64GX4M8A2400C14 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Essencore Limited KD4AGU88C-26N190A 16GB
Essencore Limited KD4AGU88C-26N190A 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMSX16GX4M2A2666C18 8GB
Corsair CMSX16GX4M2A2666C18 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-16GTZSW 16GB
G Skill Intl F4-3200C14-16GTZSW 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A4K40BB1-CRC 32GB
Samsung M393A4K40BB1-CRC 32GB
内存RAM
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Ramaxel Technology RMR5040ED58E9W1600 4GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation PUD42133C154G2VS 4GB
Panram International Corporation PUD42133C154G2VS 4GB
内存RAM