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Nanya Technology M2S4G64CB8HB5N-CG 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB vs Patriot Memory (PDP Systems) 4000 C19 Series 8GB

总分
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Nanya Technology M2S4G64CB8HB5N-CG 4GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

差异 规格 评论

差异

Nanya Technology M2S4G64CB8HB5N-CG 4GB 需要考虑的原因
Nanya Technology M2S4G64CB8HB5N-CG 4GB
报告一个错误
Patriot Memory (PDP Systems) 4000 C19 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 29
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 9.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 26
  • 读取速度，GB/s
    9.9 left arrow 19.7
  • 写入速度，GB/s
    8.1 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1691 left arrow 3842

Nanya Technology M2S4G64CB8HB5N-CG 4GB RAM的比较

Nanya Technology M2S4G64CB8HB5N-CG 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
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