Nanya Technology M2X4G64CB88CHN-DG 4GB vs Corsair CMK32GX4M4B3333C16 8GB

总分

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

总分

Corsair CMK32GX4M4B3333C16 8GB

Corsair CMK32GX4M4B3333C16 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB88CHN-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB88CHN-DG 4GB

报告一个错误

Corsair CMK32GX4M4B3333C16 8GB

需要考虑的原因
Corsair CMK32GX4M4B3333C16 8GB

报告一个错误

更快的读取速度，GB/s

18.2 12.8

测试中的平均数值
更快的写入速度，GB/s

13.4 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB88CHN-DG 4GB

Corsair CMK32GX4M4B3333C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

12.8 18.2
写入速度，GB/s

8.0 13.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2083 3604

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CB8GU2400.C8JT 8GB

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Samsung M471A1K43CB1-CRC 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M393B1K70QB0-CK0 8GB

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PNY Electronics PNY 2GB

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G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F4-3000C14-16GVR 16GB

Kingston KHX1600C9S3L/8G 8GB

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Kingston KHX2400C15D4/8G 8GB

Kingston 9905403-170.A00LF 2GB

Kingston 9905403-170.A00LF 2GB

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Samsung M391A2K43BB1-CTD 16GB

Samsung M391A2K43BB1-CTD 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB