Nanya Technology M2X4G64CB8HG9N-DG 4GB vs AMD R744G2400U1S 4GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

AMD R744G2400U1S 4GB

需要考虑的原因
AMD R744G2400U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 36

左右 -64% 更低的延时
更快的读取速度，GB/s

16.7 14.9

测试中的平均数值
更快的写入速度，GB/s

11.6 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

AMD R744G2400U1S 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 22
读取速度，GB/s

14.9 16.7
写入速度，GB/s

9.5 11.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2292 2862

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMU64GX4M4A2666C16 16GB

Corsair CMU64GX4M4A2666C16 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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AMD R744G2400U1S 4GB

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Kingston 9905316-106.A02LF 1GB

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Crucial Technology CT4G4DFS8213.C8FAR1 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston 9905633-017.A00G 8GB

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Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB