Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Corsair CM4X8GD3600C18K2D 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Corsair CM4X8GD3600C18K2D 8GB

Corsair CM4X8GD3600C18K2D 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

Corsair CM4X8GD3600C18K2D 8GB

需要考虑的原因
Corsair CM4X8GD3600C18K2D 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 -33% 更低的延时
更快的读取速度，GB/s

17.6 14.9

测试中的平均数值
更快的写入速度，GB/s

16.0 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CM4X8GD3600C18K2D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 27
读取速度，GB/s

14.9 17.6
写入速度，GB/s

9.5 16.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 3478

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingmax Semiconductor GLLG42F-18---------- 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB

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Corsair CMK16GX4M4C3200C16 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

Kingston HP16D3LS1KBG/4G 4GB

Kingston HP16D3LS1KBG/4G 4GB