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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMSX64GX4M4A2400C16 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Corsair CMSX64GX4M4A2400C16 16GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Corsair CMSX64GX4M4A2400C16 16GB

Corsair CMSX64GX4M4A2400C16 16GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 14.5
    测试中的平均数值
Corsair CMSX64GX4M4A2400C16 16GB 需要考虑的原因
Corsair CMSX64GX4M4A2400C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 36
    左右 -9% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMSX64GX4M4A2400C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 33
  • 读取速度，GB/s
    14.9 left arrow 14.5
  • 写入速度，GB/s
    9.5 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 2839

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Corsair CMSX64GX4M4A2400C16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Kingston 9905584-016.A00LF 4GB
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内存RAM
Samsung M391B5673FH0-CH9 2GB
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内存RAM
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内存RAM
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内存RAM
Kingston KP4T2F-PSB 4GB
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内存RAM
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Kingston 9905471-002.A00LF 2GB
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