Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Corsair CMT32GX4M2D3600C18 16GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

Corsair CMT32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMT32GX4M2D3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 36

左右 -16% 更低的延时
更快的读取速度，GB/s

19.8 14.9

测试中的平均数值
更快的写入速度，GB/s

15.6 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMT32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 31
读取速度，GB/s

14.9 19.8
写入速度，GB/s

9.5 15.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 3687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BLS8G4D240FSB.16FBD? 8GB

Crucial Technology BLS8G4D240FSB.16FBD? 8GB

Elpida EBJ41UF8BCF0-DJ-F 4GB

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G Skill Intl F4-3333C16-4GRKD 4GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Kingston KHX2400C15D4/4G 4GB

Kingston KHX2400C15D4/4G 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMT64GX4M4C3200C16 16GB

Corsair CMT64GX4M4C3200C16 16GB