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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Crucial Technology B|B8G4D30BET4K.C8FD 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 77
    左右 53% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 6.9
    测试中的平均数值
Crucial Technology B|B8G4D30BET4K.C8FD 8GB 需要考虑的原因
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 77
  • 读取速度，GB/s
    14.9 left arrow 11.9
  • 写入速度，GB/s
    9.5 left arrow 6.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 1517

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston ACR26D4U9S8ME-8X 8GB
Kingston ACR26D4U9S8ME-8X 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMWS8GL3200K16W4E 8GB
Corsair CMWS8GL3200K16W4E 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Mushkin 99[2/7/4]190F 4GB
Mushkin 99[2/7/4]190F 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston 9905701-006.A00G 16GB
Kingston 9905701-006.A00G 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Panram International Corporation W4U2133PS-8G 8GB
Panram International Corporation W4U2133PS-8G 8GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Kingston KST-2133MHZ-4G 4GB
Kingston KST-2133MHZ-4G 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMK64GX4M4A2400C14 16GB
Corsair CMK64GX4M4A2400C14 16GB
内存RAM