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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB 需要考虑的原因
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 27
  • 读取速度，GB/s
    14.9 left arrow 18.2
  • 写入速度，GB/s
    9.5 left arrow 16.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 3731

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Crucial Technology BLM8G40C18U4BL.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMD16GX4M4A2800C16 4GB
Corsair CMD16GX4M4A2800C16 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CM4X8GE2400C16K4 8GB
Corsair CM4X8GE2400C16K4 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3333C16-8GTZB 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
内存RAM