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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Crucial Technology CT8G4DFD8213.C16FA11 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Crucial Technology CT8G4DFD8213.C16FA11 8GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
Crucial Technology CT8G4DFD8213.C16FA11 8GB 需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FA11 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 36
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 32
  • 读取速度，GB/s
    14.9 left arrow 16.5
  • 写入速度，GB/s
    9.5 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 2974

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PUSKILL DDR3 1600 8G 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
SK Hynix HMA82GR7AFR8N-UH 16GB
SK Hynix HMA82GR7AFR8N-UH 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
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Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Kingston 9905701-018.A00G 16GB
Kingston 9905701-018.A00G 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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A-DATA Technology AO1P21FC8T1-BSKS 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
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Micron Technology 4ATF1G64AZ-3G2E1 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-2400C15-16GTZRX 16GB
G Skill Intl F4-2400C15-16GTZRX 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
内存RAM
Samsung 36HTF51272PZ-800H1 4GB
Samsung 36HTF51272PZ-800H1 4GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM
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Kingston KVR800D2N6/2G 2GB
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Shenzhen Xingmem Technology Corp 16GB
内存RAM