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Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3200C16-16GTZN 16GB
比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-3200C16-16GTZN 16GB
总分
Nanya Technology M2X4G64CB8HG9N-DG 4GB
总分
G Skill Intl F4-3200C16-16GTZN 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3200C16-16GTZN 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
36
左右 -20% 更低的延时
更快的读取速度,GB/s
17.8
14.9
测试中的平均数值
更快的写入速度,GB/s
14.3
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3200C16-16GTZN 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
30
读取速度,GB/s
14.9
17.8
写入速度,GB/s
9.5
14.3
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2292
3568
Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较
Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB
G Skill Intl F4-3200C16-16GTZN 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramos Technology RMB4GB58BCA3-13HC 4GB
Apacer Technology 78.CAGR4.40C0B 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3200C14-8GTZR 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3200C16-16GTZN 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Kingston 9965525-155.A00LF 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Heoriady M378A1K43BB2-CTD 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905624-004.A00G 4GB
Corsair CMSA4GX3M1A1333C9 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Kingston 99U5469-045.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M378A5244CB0-CTD 4GB
A-DATA Technology DDR3 1600 4GB
Kingston 9905625-065.A00G 16GB
Mushkin 991586 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
报告一个错误
×
Bug description
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