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Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-3300C16-16GTZSW 16GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 13.7
    测试中的平均数值
G Skill Intl F4-3300C16-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3300C16-16GTZSW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 36
    左右 -24% 更低的延时
  • 更快的写入速度，GB/s
    11.3 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 29
  • 读取速度，GB/s
    14.9 left arrow 13.7
  • 写入速度，GB/s
    9.5 left arrow 11.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 2967

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

G Skill Intl F4-3300C16-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB
G Skill Intl F4-3300C16-16GTZSW 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMK128GX4M8A2133C13 16GB
Corsair CMK128GX4M8A2133C13 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMW64GX4M8C3000C15 8GB
Corsair CMW64GX4M8C3000C15 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMSX8GX4M1A2666C18 8GB
Corsair CMSX8GX4M1A2666C18 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
SK Hynix HMA82GS7AFR8N-UH 16GB
SK Hynix HMA82GS7AFR8N-UH 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingston KF2666C16D4/16G 16GB
Kingston KF2666C16D4/16G 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-4000C18-32GVK 32GB
G Skill Intl F4-4000C18-32GVK 32GB
内存RAM