Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-3600C16-8GTZN 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

G Skill Intl F4-3600C16-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 -50% 更低的延时
更快的读取速度，GB/s

21 14.9

测试中的平均数值
更快的写入速度，GB/s

17.8 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3600C16-8GTZN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 24
读取速度，GB/s

14.9 21.0
写入速度，GB/s

9.5 17.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 4006

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

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Kingston 9905678-058.A00G 4GB

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Micron Technology 16JTF1G64AZ-1G6E1 8GB

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Kingston KVR800D2N6/2G 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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A-DATA Technology AD73I1B1672EG 2GB

Corsair CM4X16GE2400Z16K4 16GB

Corsair CM4X16GE2400Z16K4 16GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Kingston 9905624-010.A00G 4GB

Kingston 9905624-010.A00G 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMD32GX4M4B3333C16 8GB

Corsair CMD32GX4M4B3333C16 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB