Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-3866C18-8GTZ 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

G Skill Intl F4-3866C18-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3866C18-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 -24% 更低的延时
更快的读取速度，GB/s

20.2 14.9

测试中的平均数值
更快的写入速度，GB/s

13.1 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3866C18-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 29
读取速度，GB/s

14.9 20.2
写入速度，GB/s

9.5 13.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 3241

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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ADVAN Inc AM42E28UD04T-NVL 4GB

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Samsung M393A1G40DB0-CPB 8GB

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Corsair CMWX16GC3200C16W4 16GB

Corsair CMWX16GC3200C16W4 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Avant Technology J644GU44J9266NQ 32GB

Avant Technology J644GU44J9266NQ 32GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMW16GX4M2Z2933C16 8GB

Corsair CMW16GX4M2Z2933C16 8GB