Nanya Technology M2X4G64CB8HG9N-DG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 38

左右 5% 更低的延时
更快的读取速度，GB/s

14.9 9.4

测试中的平均数值
更快的写入速度，GB/s

9.5 8.3

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 38
读取速度，GB/s

14.9 9.4
写入速度，GB/s

9.5 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 2110

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMD16GX4M2C3333C16 8GB

Corsair CMD16GX4M2C3333C16 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2400C17-8GIS 8GB

G Skill Intl F4-2400C17-8GIS 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Mushkin MRX4U300GJJM16G 16GB

Mushkin MRX4U300GJJM16G 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB