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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston KF3200C20S4/16GX 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Kingston KF3200C20S4/16GX 16GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 48
    左右 25% 更低的延时
Kingston KF3200C20S4/16GX 16GB 需要考虑的原因
Kingston KF3200C20S4/16GX 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston KF3200C20S4/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 48
  • 读取速度，GB/s
    14.9 left arrow 16.6
  • 写入速度，GB/s
    9.5 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 2963

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Kingston KF3200C20S4/16GX 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology DDR3 1333G 2GB
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G Skill Intl F4-4000C18-32GTZR 32GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston KF3200C20S4/16GX 16GB
Kingston KF3200C20S4/16GX 16GB
内存RAM
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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
内存RAM
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内存RAM
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Transcend Information TS512MLH64V1H 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
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Wilk Elektronik S.A. GR2666D464L19/16G 16GB
内存RAM
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Kingston KVR533D2N4 512MB
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Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
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内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
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Samsung M393A2G40EB1-CPB 16GB
内存RAM
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Golden Empire CL15-17-17 D4-3200 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905701-098.A00G 16GB
Kingston 9905701-098.A00G 16GB
内存RAM