Nanya Technology M2X4G64CB8HG9N-DG 4GB vs SK Hynix HMA41GR7MFR4N-TFTD 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

更快的读取速度，GB/s

14.9 9.1

测试中的平均数值
更快的写入速度，GB/s

9.5 7.5

测试中的平均数值

SK Hynix HMA41GR7MFR4N-TFTD 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR4N-TFTD 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 36
读取速度，GB/s

14.9 9.1
写入速度，GB/s

9.5 7.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 1927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4DFS8213.C8FAR 4GB

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AMD AE34G1601U1 4GB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Corsair CM4X16GE2400C16S4 16GB

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Essencore Limited IM48GU88N26-FFFHMZ 8GB

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Kingston 99U5458-008.A00LF 4GB

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Kllisre M471A1K43CB1-CTD 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Micron Technology 72ASS4G72LZ-2G1A1 32GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB