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Nanya Technology M2X4G64CB8HG9N-DG 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs SK Hynix HMA81GS6CJRJR-VK 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
SK Hynix HMA81GS6CJRJR-VK 8GB 需要考虑的原因
SK Hynix HMA81GS6CJRJR-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 36
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    19.2 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 26
  • 读取速度，GB/s
    14.9 left arrow 19.2
  • 写入速度，GB/s
    9.5 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 3180

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

SK Hynix HMA81GS6CJRJR-VK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905743-043.A00G 16GB
Kingston 9905743-043.A00G 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Transcend Information JM2400HLB-8G 8GB
Transcend Information JM2400HLB-8G 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston KHX3000C15/16GX 16GB
Kingston KHX3000C15/16GX 16GB
内存RAM