Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs A-DATA Technology AO1P24HC4N2-BYNS 4GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

A-DATA Technology AO1P24HC4N2-BYNS 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值
更快的写入速度，GB/s

2,077.3 12.1

测试中的平均数值

A-DATA Technology AO1P24HC4N2-BYNS 4GB

需要考虑的原因
A-DATA Technology AO1P24HC4N2-BYNS 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 61

左右 -27% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 48
读取速度，GB/s

3,835.2 14.4
写入速度，GB/s

2,077.3 12.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

606 2080

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4000C15-8GTRG 8GB

G Skill Intl F4-4000C15-8GTRG 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMK16GX4M2Z2400C16 8GB

Corsair CMK16GX4M2Z2400C16 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-3600C16-16GTZNC 16GB

G Skill Intl F4-3600C16-16GTZNC 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

Ramaxel Technology RMR5030MM58E8F1600 2GB

Ramaxel Technology RMR5030MM58E8F1600 2GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Ramaxel Technology RMR5030MM58E8F1600 2GB

Ramaxel Technology RMR5030MM58E8F1600 2GB

Avant Technology J641GU48J5213NG 8GB

Avant Technology J641GU48J5213NG 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston 9965589-035.D00G 16GB

Kingston 9965589-035.D00G 16GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Micron Technology 16HTF25664HY-800J2 2GB

Micron Technology 16HTF25664HY-800J2 2GB

Corsair CMT32GX4M2K4000C19 16GB

Corsair CMT32GX4M2K4000C19 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB