Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Corsair CMD32GX4M2B3000C15 16GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

Corsair CMD32GX4M2B3000C15 16GB

Corsair CMD32GX4M2B3000C15 16GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值
更快的写入速度，GB/s

2,077.3 14.2

测试中的平均数值

Corsair CMD32GX4M2B3000C15 16GB

需要考虑的原因
Corsair CMD32GX4M2B3000C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 61

左右 -110% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Corsair CMD32GX4M2B3000C15 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 29
读取速度，GB/s

3,835.2 18.4
写入速度，GB/s

2,077.3 14.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

606 3584

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F4-4266C19-4GTZ 4GB

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Kingston 99U5471-012.A00LF 4GB

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A-DATA Technology DDR2 800G 2GB

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Kingston KVR16N11/8-SP 8GB

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Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Corsair CMK16GX4M4B3300C16 4GB

Corsair CMK16GX4M4B3300C16 4GB

Kingston 99U5428-040.A00LF 4GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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Kingston 9905711-038.A00G 8GB